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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION *With TO-3 package *Complement to type 2SC2607 APPLICATIONS *For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -200 -200 -6 -15 -5 150 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1116 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage IC=-50mA ;IB=0 IC=-10A; IB=-1A VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V -200 V Collector-emitter saturation voltage -3.0 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 Transition frequency 20 MHz Switching times resistive load tr ts tf Rise time IC=-5.0A IB1=-IB2=-0.5A RL=12@;VCC=-60V 0.3 s Storage time 0.9 s Fall time 0.2 s 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1116 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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